Samsung 990 EVO Plus SSD - 1TB - M.2 2280 - PCIe 4.0
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The Samsung 990 EVO Plus is an internal solid state drive designed for demanding applications. With a robust capacity of 1 TB, it ensures ample storage for a variety of files and applications. The drive utilizes PCI Express 5.0 and boasts internal data rates of up to 7150 MBps, allowing for quick data retrieval and minimal load times. Samsung’s V-NAND TLC Technology enhances performance and endurance, making it suitable for both everyday computing and intensive tasks. This drive is engineered to withstand a range of environmental conditions, operating effectively in temperatures from 0°C to 70°C and withstanding storage temperatures as low as -40°C and as high as 85°C. It features TRIM support and an Auto Garbage Collection Algorithm, ensuring optimal performance over time. Security is prioritized with hardware encryption and compliance with TCG Opal Encryption 2.0, safeguarding data against unauthorized access.
| Generell | |
| Hersteller: | Samsung |
| Waren-Nr.: | 3303620 |
| Modell: | MZ-V9S1T0BW |
| EAN: | 8806095575674 |
| Zum Hersteller:: | ... |
| Kontaktieren Sie den Hersteller: | |
| Produktbeschreibung: | Samsung 990 EVO Plus MZ-V9S1T0 - SSD - 1 TB - PCIe 5.0 x2 (NVMe) |
| Typ: | Solid State Drive - intern |
| Kapazität: | 1 TB |
| HardwareverschlĂĽsselung: | Ja |
| VerschlĂĽsselungsalgorithmus: | 256-Bit-AES |
| NAND-Flash-Speichertyp: | TLC (Triple-Level Cell) |
| Formfaktor: | M.2 2280 |
| Schnittstelle: | PCIe 5.0 x2 (NVMe) |
| Merkmale: | Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Geräte-Schlafunterstützung, Host Memory Buffer (HMB), TRIM-Unterstützung, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667 |
| Abmessungen (Breite x Tiefe x Höhe): | 22.15 mm x 80.15 mm x 2.38 mm |
| Gewicht: | 9 g |
| Allgemein | |
| Gerätetyp: | Solid State Drive - intern |
| Kapazität: | 1 TB |
| HardwareverschlĂĽsselung: | Ja |
| VerschlĂĽsselungsalgorithmus: | 256-Bit-AES |
| NAND-Flash-Speichertyp: | TLC (Triple-Level Cell) |
| Formfaktor: | M.2 2280 |
| Schnittstelle: | PCIe 5.0 x2 (NVMe) |
| Merkmale: | Intelligent TurboWrite Technology, Samsung V-NAND TLC Technology, Geräte-Schlafunterstützung, Host Memory Buffer (HMB), TRIM-Unterstützung, Auto Garbage Collection Algorithm, S.M.A.R.T., IEEE 1667 |
| Breite: | 22.15 mm |
| Tiefe: | 80.15 mm |
| Höhe: | 2.38 mm |
| Gewicht: | 9 g |
| Leistung | |
| Interner Datendurchsatz: | 7150 MBps (lesen)/ 6300 MBps (Schreiben) |
| Maximal 4 KB Random Write: | 1350000 IOPS |
| Maximal 4 KB Random Read: | 850000 IOPS |
| Zuverlässigkeit | |
| MTBF: | 1.500.000 Stunden |
| Erweiterung und Konnektivität | |
| Kompatibles Schaltfeld: | M.2 2280 |
| Stromversorgung | |
| Energieverbrauch: | 4.3 Watt (Lesen) 4.2 Watt (Schreiben) 60 mW (Standby) 5 mW (Sleep-Modus) |
| Software & Systemanforderungen | |
| Software inbegriffen: | Samsung Magician Software |
| Verschiedenes | |
| Gehäusematerial: | Nickelbeschichtung |
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Returns & warranty
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Eligible products can be returned within 30 days after delivery.
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